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| PACDN3401C Transient Voltage Suppressor, Single 5V, 0402 SMD Features * Single channel voltage suppressor in a surface mount EIA standard 0402-sized device * Compact 0402 size saves board space and eases layout in area critical applications compared to traditional wire bonded IC packages * In-system ESD protection to over 30kV contact discharge per IEC 61000-4-2 international ESD standard * Improved electrical characteristics over P0402FC05C Protek devices * Less than 10A leakage at 5.9V Applications * Cell phones * PDAs * Palmtop PCs * Notebook PCs * Set-top box audio and video ports * Protection of interface ports or IC pins which are exposed to ESD hazards * PCMCIA cards (PC card) Product Description The PACDN3401C is a transient voltage suppressor that is ideal for very high level protection for sensitive 5V electronic components that may be subjected to electrostatic discharge (ESD). The bipolar configuration provides symmetrical ESD protection in cases where nodes with AC signals are present. This device is designed and characterized to safely dissipate ESD strikes at 30kV contact discharge, well beyond the maximum requirements of the IEC 61000-4-2 international standard (Level 4, 8kV contact discharge). Using the MIL-STD-883D (Method 3015) specification for Human Body Model (HBM) ESD, signal pins are protected for contact discharges to greater than 30kV. Schematic Configuration S t a n d a r d Pa r t O r d e r i n g I n f o r m a t i o n Package Style Chip Scale Bumps 2 Ordering Part Number Tape & Reel PACDN3401C/R (c) 2000 California Micro Devices Corp. All rights reserved. C1561000 215 Topaz Street, Milpitas, California 95035 11/2/2000 Tel: (408) 263-3214 Fax: (408) 263-7846 www.calmicro.com 1 PACDN3401C Specifications: (At 25C unless specified otherwise) MIN Reverse Stand-off Voltage, I = 10A Signal Clamp Voltage: Positive Clamp, 10mA Negative Clamp, 10mA In-system ESD withstand voltage*: Human Body Model (MIL-STD-883D, method 3015) IEC 61000-4-2, contact discharge method Clamping voltage during ESD discharge* MIL-STD-883D (Method 3015), 8kV Capacitance at 0V dc, 1MHz Temperature Range: Operating Storage * This parameter is guaranteed by design and characterization. TYPE MAX UNIT V 5.9 6.0 -9.2 30 30 13 45 -40 -65 85 150 7.5 -7.5 9.2 -6.0 V V kV kV V pF C Device Dimensions 40 mils/1.0mm 3 mils 3 mils 14 mils 20 mils/0.5mm 6 mils Dimensions are 2 mils 1000 mils = 1 inch 14 mils 5 mils Device Capacitance 50 40 Capacitance (pF) 30 20 10 0 0 1 2 3 4 5 Voltage Across Device (V) Typical Device Capacitance vs. Voltage (c)2000 California Micro Devices Corp. All rights reserved. 2 215 Topaz Street, Milpitas, California 95035 Tel: (408) 263-3214 Fax: (408) 263-7846 www.calmicro.com 11/2/2000 |
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